According to the latest Tianyancha business registration data, on March 11, Innoscience (Suzhou) Semiconductor Co., Ltd. increased its registered capital from 3.7 billion RMB to 4.4 billion RMB—a significant 19% jump. Against the backdrop of a tightening investment climate and cautious capital in the semiconductor industry, this counter-cyclical move stands out sharply, injecting strong confidence into China's third-generation semiconductor gallium nitride (GaN) sector.

This capital increase represents a strategic commitment by Innoscience to deepen its presence in the GaN field and underscores its industry leadership. Founded in October 2017 and wholly owned by Innoscience (Suzhou) Technology Co., Ltd., the company focuses on the full chain of semiconductor device R&D, design, manufacturing, and sales. As the world's only GaN-on-Si power chip company with a full voltage spectrum product portfolio and operator of the world's first 8-inch GaN-on-Si wafer production line, this funding boost will strengthen its reserves for R&D, capacity expansion, and market development.

This move highlights the core value and growth potential of the GaN sector. As a key third-generation semiconductor material, GaN's advantages in high power density, high frequency, and low energy loss drive its adoption in data centers, EVs, robotics, and consumer power supplies, with strong long-term demand.

ICgoodFind: Innoscience's counter-cyclical capital injection strengthens its GaN wafer capacity and R&D, accelerating domestic third-gen semiconductor development and supply chain independence.