Infineon IPG16N10S4-61 N-Channel Power MOSFET for High-Efficiency Switching Applications

The demand for high-efficiency power management solutions continues to grow across industries such as automotive systems, industrial motor drives, and switch-mode power supplies. Meeting this demand requires power semiconductors that offer low losses, high reliability, and robust thermal performance. The Infineon IPG16N10S4-61 is an N-channel power MOSFET specifically engineered to excel in high-frequency switching applications where efficiency is critical.

Built using Infineon’s advanced OptiMOS™ technology, this 100V MOSFET is designed to minimize both conduction and switching losses. With a low on-state resistance (RDS(on)) of just 16 mΩ, the device significantly reduces power dissipation during operation, leading to improved energy efficiency and reduced heat generation. This characteristic is particularly beneficial in applications such as DC-DC converters and motor control circuits, where minimizing losses translates directly into enhanced system performance and longevity.

Another standout feature of the IPG16N10S4-61 is its optimized gate charge (Qg), which allows for faster switching transitions. This makes the MOSFET suitable for high-frequency circuits, enabling designers to shrink the size of passive components like inductors and capacitors, thereby reducing both board space and overall system cost. Additionally, the component offers excellent robustness against transients and a low thermal resistance, supporting sustained operation under demanding conditions.

The MOSFET is housed in a TO-263 (D2PAK) package, which offers effective power dissipation and is well-suited for automated assembly processes. Its wide operating temperature range further ensures reliability in harsh environments.

In summary, the Infineon IPG16N10S4-61 combines low RDS(on), high switching speed, and strong thermal performance into a single device, making it an ideal choice for designers aiming to push the boundaries of power efficiency and power density.

ICGOOODFIND

The Infineon IPG16N10S4-61 sets a high standard for power MOSFETs in switching applications, delivering a blend of efficiency, thermal management, and frequency performance that meets the needs of modern power systems.

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Keywords:

Power MOSFET, High-Efficiency Switching, Low RDS(on), OptiMOS™ Technology, Thermal Performance