Infineon SPA07N60C3 CoolMOS™ Power Transistor: Datasheet, Application Circuit, and Design Considerations

The Infineon SPA07N60C3 is a cornerstone component in modern high-efficiency power conversion systems. As part of Infineon's renowned CoolMOS™ C3 series, this 600 V, 7.5 A N-channel power MOSFET is engineered to deliver exceptional performance in hard- and resonant-switching topologies. Its core innovation lies in achieving an ultra-low on-state resistance (RDS(on)) while minimizing switching losses and gate charge, making it a premier choice for applications ranging from switched-mode power supplies (SMPS) and power factor correction (PFC) to lighting and industrial motor drives.

Key Datasheet Parameters and Characteristics

A thorough understanding of the datasheet is critical for successful implementation. Key parameters define the operational boundaries and performance of the transistor:

Voltage and Current Ratings: The drain-source voltage (VDS) is rated at 600 V, with a continuous drain current (ID) of 7.5 A at 25°C. The pulsed drain current (IDM) is significantly higher, at 30 A.

On-State Resistance (RDS(on)): A standout feature is its very low RDS(on) of 0.19 Ω (max. at VGS = 10 V, TJ = 25°C). This directly translates to reduced conduction losses and higher efficiency.

Dynamic Characteristics: The device boasts an extremely low total gate charge (QG) of 52 nC and low internal gate resistance (RG(int)) of 2.2 Ω. These parameters are crucial for achieving fast switching speeds and minimizing driver-related losses.

Body Diode: The integral body diode has a reverse recovery charge (Qrr) of 1.8 μC, which is vital for performance in bridge circuits and inductive switching environments.

Typical Application Circuit: PFC Boost Converter

A common application for the SPA07N60C3 is in the critical stage of an Active Power Factor Correction (PFC) boost converter. This circuit is designed to shape the input current to be sinusoidal and in-phase with the input voltage, achieving a near-unity power factor.

A simplified circuit consists of:

1. Bridge Rectifier: Converts AC mains input to a full-wave rectified DC voltage.

2. Boost Inductor (L): The key energy storage element.

3. SPA07N60C3 MOSFET: The main switching device, controlled by a PFC controller IC.

4. Boost Diode (D): A fast recovery diode that prevents backflow from the output.

5. Output Capacitor (Cout): Filters the output to a stable high-voltage DC bus.

The PFC controller (e.g., Infineon's ICE3PCS01) generates a pulse-width modulated (PWM) signal to drive the gate of the SPA07N60C3. The MOSFET's fast switching and low QG allow for high-frequency operation, which reduces the size of the passive components. Its low RDS(on) ensures minimal conduction loss during the on-time, directly boosting the overall efficiency of the PFC stage.

Critical Design Considerations

1. Gate Driving: A proper gate driver circuit is non-negotiable. The driver must be capable of sourcing and sinking sufficient peak current to rapidly charge and discharge the Ciss (Input Capacitance) of 2.8 nF. A low-impedance gate driver IC is recommended to minimize switching transition times and prevent parasitic turn-on.

2. Heat Management and Thermal Design: Despite its efficiency, power dissipation generates heat. The maximum junction temperature (TJmax) is 150°C. A thermally efficient PCB layout with a sufficiently large copper area for the drain pad (TO-220 package) is essential. The selection of an appropriate heatsink must be based on calculated power dissipation and the thermal resistance from junction-to-ambient (RθJA).

3. Snubber Circuits and Parasitics: The fast switching speed can excite parasitic inductances and capacitances in the layout, leading to voltage spikes and ringing. Careful layout minimization of high-current loop areas is the first line of defense. An RC snubber network across the drain and source may be required to dampen oscillations and protect the device from overvoltage transients.

4. Avalanche Ruggedness: The CoolMOS™ C3 technology offers specified avalanche ruggedness, meaning the device can safely absorb a certain amount of energy during unclamped inductive switching (UIS) events, adding a layer of robustness to the design.

ICGOOODFIND

The Infineon SPA07N60C3 CoolMOS™ transistor stands as a benchmark for high-voltage power switching, masterfully balancing low conduction and switching losses. Its superior performance in key metrics like RDS(on) and gate charge makes it an indispensable component for designers striving to push the boundaries of power density and efficiency in modern electronic systems.

Keywords:

1. CoolMOS™

2. RDS(on)

3. Gate Charge (QG)

4. Power Factor Correction (PFC)

5. Switching Losses