Infineon BSC009NE2LS OptiMOS 5 Power MOSFET: Datasheet, Application, and Key Features
The Infineon BSC009NE2LS is a state-of-the-art N-channel Power MOSFET from Infineon Technologies' advanced OptiMOS™ 5 25 V family. Designed to set a new benchmark in power conversion efficiency, this component is engineered for high-performance applications where low power loss, high power density, and reliability are paramount.
Key Features
This MOSFET is distinguished by several critical characteristics that make it a preferred choice for designers. Its most notable feature is its exceptionally low typical on-state resistance (R DS(on)) of just 0.26 mΩ at 10 V. This ultra-low resistance is fundamental in minimizing conduction losses, which directly translates to higher efficiency and reduced heat generation.
Furthermore, the device boasts an outstanding gate charge (Q G) performance. The low total gate charge ensures swift switching transitions, which significantly reduces switching losses. This combination of low R DS(on) and low Q G is the cornerstone of achieving maximum efficiency in high-frequency switching circuits.
The BSC009NE2LS is housed in an SuperSO8 (PG-TDSON-8) package. This packaging technology offers superior thermal performance and a very compact footprint, enabling designers to push the boundaries of power density in their systems. It also features an avalanche ruggedness specification, enhancing its reliability in demanding environments.
Primary Applications
The blend of high efficiency and robust performance makes the BSC009NE2LS ideal for a wide array of demanding applications. Its primary use is in synchronous rectification circuits within switch-mode power supplies (SMPS), including server, telecom, and industrial power units. It is also perfectly suited for high-current DC-DC conversion stages in computing and data center infrastructure. Additionally, it finds roles in motor drive and control circuits, battery management systems (BMS), and any application requiring high-efficiency power switching with minimal losses.
Datasheet Overview
The official datasheet for the BSC009NE2LS is an essential resource for any design engineer. It provides comprehensive information, including:
Absolute Maximum Ratings: Defining the operational limits for voltage, current, and temperature.
Electrical Characteristics: Detailed tables and graphs for parameters like R DS(on), gate threshold voltage, capacitances, and switching times.
Typical Performance Characteristics: Charts illustrating the behavior of the device under various conditions.
Package Outline Drawings: Precise mechanical dimensions for PCB layout.
Consulting the datasheet is crucial for ensuring the MOSFET is used within its Safe Operating Area (SOA) for a reliable and long-lasting design.
The Infineon BSC009NE2LS OptiMOS™ 5 MOSFET stands out as a top-tier solution for modern power electronics. Its industry-leading combination of ultra-low R DS(on) and minimal switching losses empowers engineers to create more efficient, compact, and cooler-running power systems, particularly in data center, industrial, and computing applications.
Keywords:
1. Power Efficiency
2. Low RDS(on)
3. Synchronous Rectification
4. OptiMOS 5
5. SuperSO8 Package
