Infineon IPD60R3K3C6: A High-Performance CoolMOS™ Power Transistor for Efficient Switching Applications

In the realm of modern power electronics, efficiency, power density, and reliability are paramount. The Infineon IPD60R3K3C6 stands out as a premier solution, engineered to meet the rigorous demands of high-efficiency switching applications. As part of Infineon’s renowned CoolMOS™ C6 series, this power MOSFET leverages cutting-edge superjunction technology to deliver exceptional performance in a compact TO-252 (DPAK) package.

A key strength of the IPD60R3K3C6 is its remarkably low on-state resistance (RDS(on)) of just 33 mΩ at a gate-source voltage of 10 V. This minimal resistance directly translates to reduced conduction losses, enabling higher efficiency and less heat generation during operation. Combined with an ultra-low gate charge (Qg) and superior switching characteristics, the device is optimized for high-frequency operation, making it an ideal choice for switched-mode power supplies (SMPS), power factor correction (PFC) stages, lighting controls, and motor drive circuits.

The innovative CoolMOS™ technology also ensures excellent thermal performance and robustness. The device offers a high avalanche ruggedness and is designed to operate reliably under stressful conditions, contributing to longer system lifetimes and reduced cooling requirements. Its ability to perform efficiently at high switching frequencies allows designers to use smaller passive components, such as inductors and capacitors, thereby increasing power density and reducing overall system size and cost.

Furthermore, the IPD60R3K3C6 is characterized by its high sustainability and energy efficiency, aligning with global standards for eco-friendly electronic design. It is particularly suited for applications requiring high reliability and compact form factors, including adapters, chargers, and industrial power systems.

ICGOOODFIND:

The Infineon IPD60R3K3C6 CoolMOS™ transistor sets a high benchmark in power switching technology, offering an outstanding blend of low losses, thermal efficiency, and design flexibility for next-generation power applications.

Keywords:

CoolMOS™, Low RDS(on), High-Frequency Switching, Power Efficiency, Superjunction Technology